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AOT474/AOTF474
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R DS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. AOT(F)474/AOT(F)474L are electrically Identical AOT(F)474 -RoHS Compliant AOT(F)474L -Halogen Free
TO220FL Bottom View
Product Summary
VDS ID_TO220 (at V GS=10V) ID_TO220FL (at VGS=10V) RDS(ON) (at VGS=10V) 75V 127A 47A < 11.3m
100% UIS Tested
Top View D
TO220 Bottom View
Top View
D
S G D S
G D G D
S S D
G
G S
AOT474
AOTF474 AOTF474 75 25 127 89 200 9 7 106 562 417 208 1.9 1.2 -55 to 175 57.5 29 1.9 1.2 9 7 A A mJ W W C 47 33 A Units V V
Absolute Maximum Ratings TA=25C unless otherwise noted AOT474 Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current
C C C
VGS TC=25C TC=100C TA=25C TA=70C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG TC=25C
Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation
B
TC=100C TA=25C TA=70C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
A AD
t 10s Steady-State Steady-State
RJA RJC
AOT474 13.9 65 0.36
AOTF474 13.9 65 2.6
Units C/W C/W C/W
Rev 0: February 2009
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Page 1 of 7
AOT474/AOTF474
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250A, VGS=0V VDS=75V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C VDS=5V, ID=30A 2.6 200 9.4 18 67 0.73 1 128 2240 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 355 22 1.4 39 VGS=10V, VDS=30V, ID=30A 11 8 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=500A/s 35 330 2805 507 36 2.8 49.6 13.8 14 15 34 42 4.5 50 472 65 614 3370 660 50 4.2 60 17 20 11.3 21.5 3.4 Min 75 1 5 100 4 Typ Max Units V A nA V A m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
Rev 0:February 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
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Page 2 of 7
AOT474/AOTF474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150 120 90 5.5V 60 5V 30 VGS=4.5V 0 0 2 4 6 8 10 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 13 Normalized On-Resistance 12 11 RDS(ON) (m) 10 9 8 7 6 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) VGS=10V 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=10V ID=30A ID(A) 10V 8V 6V 105 90 75 ID (A) 60 45 30 15 0 3 3.5 4 4.5 5 5.5 6 6.5 7 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C -40C VDS=5V
17 5 2 10
30 ID=30A 25 20 IS (A) 15 10 5 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C 125C
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25C 125C -40C
40
Rev 0: February 2009
RDS(ON) (m)
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Page 3 of 7
AOT474/AOTF474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=30V ID=30A Capacitance (pF) 5000
8
4000
Ciss
VGS (Volts)
6
3000
4
2000 Coss 1000 Crss
2
0 0 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 50
0 0 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 10 20 60
200 IAR (A) Peak Avalanche Current
150 TA=25C 100 TA=150C 50 TA=125C 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) TA=100C
Rev 0: February 2009
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Page 4 of 7
AOT474/AOTF474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000 8000 Power (W) 6000 4000 2000 0 1E-05 0.0001 0.001 TJ(Max)=175C TC=25C Power (W) 10000 8000 6000 4000 2000 0 1E-05 0.0001 TJ(Max)=175C TC=25C
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase for AOT474 (Note F) 10000 TA=25C 1000 Power (W) Power (W)
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toCase for AOTF474 (Note F) 10000 TA=25C 1000
100
100
10
10
1 0.001
0.1
10
1000
1 0.001
0.1
10
1000
Pulse Width (s) Figure 12: Single Pulse Power Rating Junction-toAmbient for AOT474 (NoteG)
Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toAmbient for AOTF474 (Note G)
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01
1000.0
10s ID (Amps) RDS(ON) limited DC 100s 1ms 10ms TJ(Max)=175C TC=25C
100.0 10.0 1.0 0.1 0.0 0.01
10s RDS(ON) limited DC TJ(Max)=175C TC=25C 100s 1ms 10ms
1 10 100 1000 VDS (Volts) Figure 14: Maximum Forward Biased Safe Operating Area for AOT474 (Note F)
0.1
1 10 100 1000 VDS (Volts) Figure 15: Maximum Forward Biased Safe Operating Area for AOTF474 (Note F)
0.1
Rev 0: February 2009
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Page 5 of 7
AOT474/AOTF474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.36C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T
10
100
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance for AOT474 (Note F)
10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.6C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF474 (Note F)
Rev 0: February 2009
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Page 6 of 7
AOT474/AOTF474
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
EAR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Rev 0: February 2009
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Page 7 of 7

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